首頁 >TPCA8102(TE12LQ)>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
P-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
FieldEffectTransistorSiliconP-ChannelMOSType(U-MOS?? NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetoasmallandthinpackage ?Lowdrain-sourceON-resistance: RDS(ON)=14.5mΩ(typ.)(VGS=-10V) ?Lowleakagecurrent:IDSS=-10μA(max)(VDS=-30V) ?Enhancementmode:Vth | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
FieldEffectTransistorSiliconPChannelMOSType(U-MOSIII) NotebookPCApplications PortableEquipmentApplications ?Lowdrain-sourceONresistance:RDS(ON)=24m?(typ.) ?Highforwardtransferadmittance:|Yfs|=14S(typ.) ?Lowleakagecurrent:IDSS=?10μA(max)(VDS=?20V) ?Enhancementmode:Vth=?0.5to?1.2V | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
FieldEffectTransistorSiliconPChannelMOSType(U-MOS?? LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetoasmallandthinpackage ?Lowdrain-sourceON-resistance:RDS(ON)=6.0mΩ(typ.) ?Highforwardtransferadmittance:|Yfs|=44S(typ.) ?Lowleakagecurrent:IDSS=?10μA( | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconP-ChannelMOSType(U-MOS?? NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceON-resistance:RDS(ON)=13.5mΩ(typ.) ?Highforwardtransferadmittance:|Yfs|=24S(typ.) ?Lowleakagecurrent:IDSS=-10μA(max)(VDS=-20V) ?Enhancement | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
LithiumIonBatteryApplicationsPortableEquipmentApplicationsNotebookPCs | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Lithium-IonBatteryApplicationsPortableEquipmentApplicationsNotebookPCApplications | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
LOWPOWERHALLEFFECTSWITCH | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
RFAMPLIFIERICFOR150MHzTO330MHzPAGERSYSTEM DESCRIPTION μPC8102TisasiliconmonolisicintegratedcircuitdesignedasRFamplifierfor150MHzto330MHzpagersystem.Dueto1Vsupplyvoltage,thisICissuitableforlowvoltagepagersystem.Thepackageisa6pinminimoldsuitableforhigh-densitysurfacemounting. ThisICismanufa | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
RFAMPLIFIERICFOR150MHzTO330MHzPAGERSYSTEM DESCRIPTION μPC8102TisasiliconmonolisicintegratedcircuitdesignedasRFamplifierfor150MHzto330MHzpagersystem.Dueto1Vsupplyvoltage,thisICissuitableforlowvoltagepagersystem.Thepackageisa6pinminimoldsuitableforhigh-densitysurfacemounting. ThisICismanufa | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES ?1Vsupplyvoltage:VCC=0.9Vto2.0V ?Lownoisefigure:2.3dBTYP.@fin=150MHz(withexternalmatchingcircuittooptimizeNF) ?Lowcurrentconsumption:ICC=0.5mATYP.@VCC=1.0V ?Gainavailablefrequency:fRF=150MHzto330MHz(withexternalmatchingcircuit) ? | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
P-Channel100-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Available ?TrenchFET?PowerMOSFET APPLICATIONS ?LoadSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
CommonModeChoke | ALLIED Allied Components International | ALLIED | ||
CommonModeChokewithBase | ALLIED Allied Components International | ALLIED | ||
CommonModeChokewithBase | ALLIED Allied Components International | ALLIED | ||
LoadSwitch | TOREXTorex Semiconductor 特瑞仕特瑞仕半導(dǎo)體株式會社 | TOREX | ||
Small(1.2mmx1.6mm)400mALineSwitchwithLowOn-Resistance | TOREXTorex Semiconductor 特瑞仕特瑞仕半導(dǎo)體株式會社 | TOREX |
詳細參數(shù)
- 型號:
TPCA8102(TE12LQ)
- 制造商:
Toshiba America Electronic Components
- 功能描述:
MOSFET P CH 40A 30V SOP8
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TOSHIBA |
23+ |
SOP-8 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
TOSHIBA |
2020+ |
SOP-8 |
8000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
TOSHIBA/東芝 |
23+ |
SOP-8 |
10800 |
只做原裝 歡迎咨詢 |
詢價 | ||
Toshiba Semiconductor and Stor |
22+ |
8PowerVDFN |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
TOSHIBA |
2020+ |
QFN8 |
964 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
TOSHIBA |
22+23+ |
QFN8 |
68552 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨 |
詢價 | ||
TOSHIBA |
22+ |
QFN8 |
28600 |
只做原裝正品現(xiàn)貨假一賠十一級代理 |
詢價 | ||
TOSHIBA |
1012+ |
QFN8 |
524 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
TOSHIBA |
QFN8 |
699839 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
TOSHIBA |
22+ |
QFN8 |
10000 |
公司原裝現(xiàn)貨,歡迎咨詢 |
詢價 |
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