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TPC8102

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (MOSVI)

LithiumIonBatteryApplications NotebookPCs PortableEquipmentApplications ●Smallfootprintduetosmallandthinpackage ●Lowdrain?sourceONresistance:RDS(ON)=34m?(typ.) ●Highforwardtransferadmittance:|Yfs|=9S(typ.) ●Lowleakagecurrent:IDSS=?10μA(max)(VDS=

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPC8102

2-ch DC/DC Converter IC

■DESCRIPTION TheMB39A104isa2-channelDC/DCconverterICusingpulsewidthmodulation(PWM),incorporatinganovercurrentprotectioncircuit(requiringnocurrentsenseresistor).ThisICisidealfordownconversion. Operatingathighfrequencyreducesthevalueofcoil. Thisisidealfor

FujitsuFujitsu Component Limited.

富士通富士通株式會(huì)社

TPCA8102

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII)

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceONresistance:RDS(ON)=4.5m?(typ.) ?Highforwardtransferadmittance:|Yfs|=60S(typ.) ?Lowleakagecurrent:IDSS=?10μA(max

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCA8102

LithiumIonBatteryApplicationsNotebookpcApplicationsNotebookPCApplicationsPortableEquipmentApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCA8102-H

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

TPCC8102

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCC8102

FieldEffectTransistorSiliconP-ChannelMOSType(U-MOS??

NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetoasmallandthinpackage ?Lowdrain-sourceON-resistance: RDS(ON)=14.5mΩ(typ.)(VGS=-10V) ?Lowleakagecurrent:IDSS=-10μA(max)(VDS=-30V) ?Enhancementmode:Vth

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCF8102

FieldEffectTransistorSiliconPChannelMOSType(U-MOSIII)

NotebookPCApplications PortableEquipmentApplications ?Lowdrain-sourceONresistance:RDS(ON)=24m?(typ.) ?Highforwardtransferadmittance:|Yfs|=14S(typ.) ?Lowleakagecurrent:IDSS=?10μA(max)(VDS=?20V) ?Enhancementmode:Vth=?0.5to?1.2V

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCF8102

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCM8102

FieldEffectTransistorSiliconPChannelMOSType(U-MOS??

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetoasmallandthinpackage ?Lowdrain-sourceON-resistance:RDS(ON)=6.0mΩ(typ.) ?Highforwardtransferadmittance:|Yfs|=44S(typ.) ?Lowleakagecurrent:IDSS=?10μA(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCP8102

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCP8102

TOSHIBAFieldEffectTransistorSiliconP-ChannelMOSType(U-MOS??

NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceON-resistance:RDS(ON)=13.5mΩ(typ.) ?Highforwardtransferadmittance:|Yfs|=24S(typ.) ?Lowleakagecurrent:IDSS=-10μA(max)(VDS=-20V) ?Enhancement

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCS8102

LithiumIonBatteryApplicationsPortableEquipmentApplicationsNotebookPCs

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCS8102

Lithium-IonBatteryApplicationsPortableEquipmentApplicationsNotebookPCApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

UH8102

LOWPOWERHALLEFFECTSWITCH

UTCUnisonic Technologies

友順友順科技股份有限公司

UPC8102

RFAMPLIFIERICFOR150MHzTO330MHzPAGERSYSTEM

DESCRIPTION μPC8102TisasiliconmonolisicintegratedcircuitdesignedasRFamplifierfor150MHzto330MHzpagersystem.Dueto1Vsupplyvoltage,thisICissuitableforlowvoltagepagersystem.Thepackageisa6pinminimoldsuitableforhigh-densitysurfacemounting. ThisICismanufa

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC8102T

RFAMPLIFIERICFOR150MHzTO330MHzPAGERSYSTEM

DESCRIPTION μPC8102TisasiliconmonolisicintegratedcircuitdesignedasRFamplifierfor150MHzto330MHzpagersystem.Dueto1Vsupplyvoltage,thisICissuitableforlowvoltagepagersystem.Thepackageisa6pinminimoldsuitableforhigh-densitysurfacemounting. ThisICismanufa

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC8102T

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?1Vsupplyvoltage:VCC=0.9Vto2.0V ?Lownoisefigure:2.3dBTYP.@fin=150MHz(withexternalmatchingcircuittooptimizeNF) ?Lowcurrentconsumption:ICC=0.5mATYP.@VCC=1.0V ?Gainavailablefrequency:fRF=150MHzto330MHz(withexternalmatchingcircuit) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

VB8102M

P-Channel100-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Available ?TrenchFET?PowerMOSFET APPLICATIONS ?LoadSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VCMB8102-RC

CommonModeChokewithBase

ALLIED

Allied Components International

詳細(xì)參數(shù)

  • 型號(hào):

    TPC8102

  • 制造商:

    TOSHIBA

  • 制造商全稱:

    Toshiba Semiconductor

  • 功能描述:

    TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(MOSVI)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TOSHIBA
04+
SOP
50000
深圳現(xiàn)貨
詢價(jià)
TOSHIBA
16+
SOP8
3500
原裝現(xiàn)貨假一賠十
詢價(jià)
TOSHIBA
02+
SOP8
5119
全新原裝07
詢價(jià)
TOSHIBA
24+
SOP8
9800
一級(jí)代理/全新原裝現(xiàn)貨/長(zhǎng)期供應(yīng)!
詢價(jià)
TOSHIBA/東芝
2019+
SOP8
18000
原廠渠道 可含稅出貨
詢價(jià)
Bychip
23+
SOP8
10000
高品質(zhì)替代,技術(shù)支持,參數(shù)選型
詢價(jià)
TOSHIBA
2024
SOP
13500
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力高端行業(yè)供應(yīng)商
詢價(jià)
TOSHIBA
11+
sop8
8000
全新原裝,絕對(duì)正品現(xiàn)貨供應(yīng)
詢價(jià)
TOS
23+
SOP
3500
絕對(duì)全新原裝!現(xiàn)貨!特價(jià)!請(qǐng)放心訂購(gòu)!
詢價(jià)
TOS
00+/01+
SOP8
12144
全新原裝100真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
更多TPC8102供應(yīng)商 更新時(shí)間2024-12-28 8:40:00