首頁(yè) >TPB50R250C>規(guī)格書(shū)列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
TPB50R250C | Marking:50R250C;Package:TO-263;500V Super-Junction Power MOSFET | WUMCWuxi Unigroup Microelectronics Company 紫光國(guó)微紫光國(guó)芯微電子股份有限公司 | WUMC | |
TPB50R250C | Marking:50R250C;Package:TO-263;500V Super-Junction Power MOSFET | WUMCWuxi Unigroup Microelectronics Company 紫光國(guó)微紫光國(guó)芯微電子股份有限公司 | WUMC | |
N-ChannelMOSFETTransistor ?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.25? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRITION ?HighPeakCurrentCapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤250m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplica | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMosPowerTransistor Features ?LowestfigureofmeritRonxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Pb-freeleadplating;RoHScompliant;Halogenfreeformoldcompound ?QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) CoolMOSCPisdesignedfor: ?Ha | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor Features ?Lowestfigure-of-meritRonxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound ?QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.25? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOSPowerTransistor Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Pb-freeleadplating;RoHScompliant ?QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisdesignedfor: ?Hard&softswitchingSMPStopologies ? | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.25? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
24+ |
N/A |
69000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
MDD |
21+ |
DO-27S |
12588 |
原裝正品,價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
TI |
1728+ |
DSBGA-16 |
6528 |
只做進(jìn)口原裝正品假一賠十! |
詢價(jià) | ||
TI/德州儀器 |
22+ |
DSBGA-16 |
9600 |
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單! |
詢價(jià) | ||
TI/德州儀器 |
22+ |
DSBGA-16 |
50000 |
只做正品原裝,假一罰十,歡迎咨詢 |
詢價(jià) | ||
TI/德州儀器 |
22+ |
DSBGA-16 |
21000 |
原廠原包裝。假一罰十??砷_(kāi)13%增值稅發(fā)票。 |
詢價(jià) | ||
ST |
22+ |
DIP |
66900 |
原廠原裝現(xiàn)貨 |
詢價(jià) | ||
ST |
DIP |
36900 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
ST |
22+ |
DIP |
16900 |
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持! |
詢價(jià) | ||
ST |
24+ |
DIP |
200000 |
原裝進(jìn)口正口,支持樣品 |
詢價(jià) |
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