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11N50

11A,500VN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

11N50

500VN-CHANNELMOSFET

?DESCRIPTION TheUTC11N50isanN-channelenhancementmodepowerMOSFET.ItusesUTCadvancedplanarstripe,DMOStechnologytoprovidecustomersperfectswitchingperformance,minimalon-stateresistance.Italsocanwithstandhighenergypulseintheavalancheandcommutationmode. TheU

UTCUnisonic Technologies

友順友順科技股份有限公司

11N50K-MT

N-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

AP11N50I

N-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

FB11N50A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

FB11N50A

PowerMOSFET(Vdss=500V,Rds(on)max=0.52ohm,Id=11A)

Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowe

IRF

International Rectifier

FDP11N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.725Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQP11N50CF

500VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF11N50CF

500VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF11N50CF

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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330
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11200
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3268
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12000
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更多TMPF11N50G供應(yīng)商 更新時(shí)間2025-5-14 9:22:00