TMM2018AP

16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply

TMM2018AP-25

16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply

TMM2018AP-35

16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply

TMM2018AP-45

16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply

VS2018AL

N-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverter

VSMP2018

UltraHighPrecisionFoilWraparoundSurfaceMountChipResistorwithTCRof±0.05ppm/°CandPowerCoefficientof5ppmatRatedPowerandLoadLifeStabilityof±0.005(50ppm)

YF2018ID

ElectCuSingleInsulWireFerrules,SmoothFunnelEntry,20AWG,0.95L,TinPlated,Gray,ForuseonCuCond.

YF2018IT

ElectCuSingleInsulWireFerrules,SmoothFunnelEntry,20AWG,0.95L,TinPlated,Blue,ForuseonCuCond.

YF2018IW

ElectCuSingleInsulWireFerrules,SmoothFunnelEntry,20AWG,0.95L,TinPlated,White,ForuseonCuCond.

Z2018

TRANSIENTVOLTAGESUPPRESSOR