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PSLA1A336M

PL/LSeries

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

PSLC1A336M

PL/LSeries

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

SVFD1A336M

SurfacemountresinmoldedchipwithBuilt-infuse,Lowblow-outcurrent(2A)

SurfacemountresinmoldedchipwithBuilt-infuse,Lowblow-outcurrent(2A) TheSV/Fseriesfeaturesabuilt-infusetominimizecircuitdamagefromovercurrentbyprotectionwithlessthanahalfblow-outcurrentoftheformertype. Thisfuse-protectedcapacitorissuitablefornoiseabsorpt

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

TCFGB1A336K

Chiptantalumcapacitorswithopen-functionbuilt-in

ROHMRohm

羅姆羅姆半導體集團

TCFGB1A336M

Chiptantalumcapacitorswithopen-functionbuilt-in

ROHMRohm

羅姆羅姆半導體集團

TCFGC1A336MCR

Chiptantalumcapacitorswith(Fail-safeopenstructuretype)

ROHMRohm

羅姆羅姆半導體集團

TCOB1A336M

Chiptantalumcapacitors

ROHMRohm

羅姆羅姆半導體集團

TCSCS1A336AAR

ManganeseDioxideType

SamsungSamsung semiconductor

三星三星半導體

TCSCS1A336BAR

ManganeseDioxideType

SamsungSamsung semiconductor

三星三星半導體

TCSCS1A336CAR

ManganeseDioxideType

SamsungSamsung semiconductor

三星三星半導體

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