首頁 >TM1721(TA2003B)>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
DualFeedEmbeddedBeiDou/Galileo/GPS/GLONASSAntenna | TALLYSMAN Tallysman Wireless Inc. | TALLYSMAN | ||
CrystalUnitSMD2.5x2.040.0MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ?Lowon-resistance RDS(on)1=10.5mΩMAX.(VGS=10V,ID=5.0A) RDS(on)2=14.0mΩMAX.(VGS=4.5V,ID=5.0A) RDS(on)3=17.0mΩMAX.(VGS=4.0V,ID=5.0A) ?LowCiss:Ciss=2200pFTYP. ?Built-inG-Sprotectiondi | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION TheμPA1721isN-ChannelMOSFieldEffectTransistordesignedforDC/DCconvertersandpowermanagementapplicationsofnotebookcomputers. FEATURES ?Lowon-resistance RDS(on)1=10.5m?MAX.(VGS=10V,ID=5.0A) RDS(on)2=14.0m?MAX.(VGS=4.5V,ID=5.0A) | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ?Lowon-resistance RDS(on)1=10.5mΩMAX.(VGS=10V,ID=5.0A) RDS(on)2=14.0mΩMAX.(VGS=4.5V,ID=5.0A) RDS(on)3=17.0mΩMAX.(VGS=4.0V,ID=5.0A) ?LowCiss:Ciss=2200pFTYP. ?Built-inG-Sprotectiondi | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION TheμPA1721isN-ChannelMOSFieldEffectTransistordesignedforDC/DCconvertersandpowermanagementapplicationsofnotebookcomputers. FEATURES ?Lowon-resistance RDS(on)1=10.5m?MAX.(VGS=10V,ID=5.0A) RDS(on)2=14.0m?MAX.(VGS=4.5V,ID=5.0A) | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC |
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