首頁(yè) >TLSR8208C>規(guī)格書列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII) LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceONresistance:RDS(ON)=38m?(typ.) ?Highforwardtransferadmittance:|Yfs|=6.3S(typ.) ?Lowleakagecurrent:IDSS=10μA(ma | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
LithiumIonBatteryApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII) LithiumIonBatteryApplications ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceONresistance:RDS(ON)=13m?(typ.) ?Highforwardtransferadmittance:|Yfs|=15S(typ.) ?Lowleakagecurrent:IDSS=10μA(max)(VDS=20V) ?Enhancementmode:Vth=0.5~1.2V(VDS= | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Li-Ion/Polymer2/3/4-CellSecondProtectionICVoltageRegulator | UPI uPI Semiconductor Corp | UPI |
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