首頁 >TLE8001QK>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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SiliconNChannelMOSType(MOSVI) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII) NotebookPCApplications PortableEquipmentApplications ?Lowdrain-sourceONresistance:RDS(ON)=19m?(typ.) ?Highforwardtransferadmittance:|Yfs|=8S(typ.) ?Lowleakagecurrent:IDSS=10μA(max.)(VDS=30V) ?Enhancementmode:Vth=1.3to2.5V | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconN-ChannelMOSType(Ultra-High-SpeedU-MOSIII) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
HighSpeedandHighEfficiencyDC-DCConverters,NotebookPCApplications,PortableEquipmentApplications High-EfficiencyDC/DCConverterApplications NotebookPCApplications Portable-EquipmentApplications ?Smallfootprintduetoasmallandthinpackage ?High-speedswitching ?Smallgatecharge:QSW=6.0nC(typ.) ?Lowdrain-sourceON-resistance:RDS(ON)=7m?(typ.) ?Highforwardtr | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(UltraHighspeedU-MOSIII) HighEfficiencyDC/DCConverterApplications NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetoasmallandthinpackage ?Highspeedswitching ?Smallgatecharge:QSW=3.6nC(typ.) ?Lowdrain-sourceON-resistance:RDS(ON)=13m?(typ.) ?Highforwardt | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
868.35MHzHybridTransceiver | rfm RF Monolithics, Inc | rfm | ||
868.35MHzHybridTransceiver | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | MuRata | ||
SingleOutputDCPowerSupplies | KEYSIGHTKeysight Technologies 是德科技是德科技(中國)有限公司 | KEYSIGHT | ||
Li-ion/LiPolymerBatteryCharger | UPI uPI Semiconductor Corp | UPI |
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