首頁(yè) >TISP8201MD-S>規(guī)格書列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
DoorModulePowerIC | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType LithiumIonBatteryApplications PortableEquipmentApplications NotebookPCs ●Lowdrain?sourceONresistance:RDS(ON)=37m?(typ.) ●Highforwardtransferadmittance:|Yfs|=6S(typ.) ●Lowleakagecurrent:IDSS=10μA(max)(VDS=30V) ●Enhancement?mode:Vth=0.8~2.0V(VDS= | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
FieldEffectTransistorSiliconNChannelMOSType(U-MOSIII) NotebookPCApplications PortableEquipmentApplications ?Lowdrain-sourceONresistance:RDS(ON)=38m?(typ.) ?Highforwardtransferadmittance:|Yfs|=5.4S(typ.) ?Lowleakagecurrent:IDSS=10μA(max)(VDS=20V) ?Enhancement-mode:Vth=0.5to1.2V(VDS=10V,ID=200μA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
DualN-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
PortableEquipmentApplications PortableEquipmentApplications MotorDriveApplications DC-DCConverterApplications ?Lead(Pb)-Free ?Lowdrain-sourceONresistance:RDS(ON)=38m?(typ.) ?Highforwardtransferadmittance:|Yfs|=7.0S(typ.) ?Lowleakagecurrent:IDSS=10μA(VDS=30V) ?Enhancementmode:Vth= | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOS) LithiumIonBatteryApplications PortableEquipmentApplications NotebookPCs Smallfootprintduetosmallandthinpackage Lowdrain-sourceONresistance:RDS(ON)=22m?(typ.) Highforwardtransferadmittance:|Yfs|=13S(typ.) Lowleakagecurrent:IDSS=10μA(max)(VDS=20V) Enha | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
BOURNS |
2023+ |
SOP |
3365 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) | ||
BOURNS |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
BOURNS |
20+ |
SOP8 |
2960 |
誠(chéng)信交易大量庫(kù)存現(xiàn)貨 |
詢價(jià) | ||
BOURNS |
22+23+ |
SOP-8 |
32275 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
BOURNS |
2016+ |
SOP-8 |
6523 |
只做進(jìn)口原裝現(xiàn)貨!假一賠十! |
詢價(jià) | ||
BOURNS |
2020+ |
SOP8 |
2000 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
BOURNS |
22+ |
SOP8 |
5000 |
全新原裝現(xiàn)貨!價(jià)格優(yōu)惠!可長(zhǎng)期 |
詢價(jià) | ||
BOURNS |
2023+ |
SOP-8 |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
只做原裝 |
24+ |
SOP-8 |
36520 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) | ||
BOURNS |
21+ |
SOP-8 |
26500 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) |
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