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TIM1011-2L

MICROWAVE POWER GaAs FET

FEATURES ■HIGHPOWER P1dB=33.5dBmat10.7GHzto11.7GHz ■HIGHGAIN G1dB=7.5dBat10.7GHzto11.7GHz ■BROADBANDINTERNALLYMATCHED ■HERMETICALLYSEALEDPACKAGE

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

BLA1011-2

AvionicsLDMOStransistor

DESCRIPTION SiliconN-channelenhancementmodelateralD-MOStransistorencapsulatedina2-leadflangelesspackage(SOT538A)withaceramiccap.Thecommonsourceisconnectedtothemountingbase. FEATURES ?Highpowergain ?Easypowercontrol ?Excellentruggedness ?Sourceonmountingb

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLA1011-2

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

EIA1011-2P

10.7-11.7GHz,2WInternallyMatchedPowerFET

10.7-11.7GHz,2WInternallyMatchedPowerFET ?10.7-11.7GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM ?EIAFEATURESHIGHPAE(30TYPICAL) ?EIBFEATURESHIGHIP3(46dBmTYPICAL) ?+33.5/+33.0dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB ?9.5/8.5dBTYPICALG1dBPOWERGAINFOREIA/EI

Excelics

Excelics Semiconductor, Inc.

EIB1011-2P

10.7-11.7GHz,2WInternallyMatchedPowerFET

10.7-11.7GHz,2WInternallyMatchedPowerFET ?10.7-11.7GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM ?EIAFEATURESHIGHPAE(30TYPICAL) ?EIBFEATURESHIGHIP3(46dBmTYPICAL) ?+33.5/+33.0dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB ?9.5/8.5dBTYPICALG1dBPOWERGAINFOREIA/EI

Excelics

Excelics Semiconductor, Inc.

NEZ1011-2E

GaAsMESFET

2WX-BANDPOWERGaAsFET N-CHANNELGaAsMESFET DESCRIPTION TheNEZ1011-2EispowerGaAsFETwhichprovides highgain,highefficiencyandhighoutputpowerinXband. Theinternalinputandoutputmatchingenables guaranteedperformancetobeachievedwithonlya50W externalcircuit.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NEZ1011-2E

2WX,Ku-BANDPOWERGaAsMESFET

DESCRIPTION TheNEZ1011-2EandNEZ1414-2EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhighoutputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwithonlya50?externalcircuit.Toreducethermalresistancethedevic

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    TIM1011-2L

  • 制造商：

    Toshiba America Electronic Components

  • 功能描述：

    TRANSISTOR, GAAS FET INTERNALLY MATCHED, 11GHZ, 15W - Trays

供應(yīng)商型號品牌批號封裝庫存備注價格
TOSHIBA
23+
高頻管
1200
專營高頻管模塊,全新原裝!
 詢價
TOSHIBA
24+
SMD
1680
一級代理原裝進口現(xiàn)貨
 詢價
TOSHIBA/東芝
24+
100
現(xiàn)貨供應(yīng)
 詢價
TOSHIBA/東芝
23+
TO-59
8510
原裝正品代理渠道價格優(yōu)勢
 詢價
TOSHIBA
21+
標(biāo)準(zhǔn)封裝
50
進口原裝,訂貨渠道!
 詢價
MOTOROLA
24+
原裝
2789
全新原裝自家現(xiàn)貨!價格優(yōu)勢!
 詢價
TOSHIBA/東芝
24+
780
原裝現(xiàn)貨假一賠十
 詢價
TOSHIBA/東芝
2021+
3000
十年專營原裝現(xiàn)貨,假一賠十
 詢價
TOSHIBA/東芝
24+
N/A
10000
只做原裝正品上傳就有貨假一賠十
 詢價
TOSHIBA/東芝
23+
N/A
7560
原廠原裝
 詢價
更多TIM1011-2L供應(yīng)商 更新時間2025-1-28 16:30:00

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