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TGF4250-SCC中文資料TriQuint數(shù)據(jù)手冊PDF規(guī)格書

TGF4250-SCC
廠商型號

TGF4250-SCC

功能描述

DC - 10.5 GHz Discrete HFET

文件大小

325.44 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商 TriQuint Semiconductor
企業(yè)簡稱

TriQuint

中文名稱

TriQuint Semiconductor官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-12-28 8:00:00

TGF4250-SCC規(guī)格書詳情

Description

The TriQuint TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34 dBm power output, 13 dB gain, and 53 PAE.

Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. The TGF4250-SCC is readily assembled using automatic equipment. For an Application Note on the use of HFETs, refer to the TriQuint website for the Millimeter Wave Division.

Key Features and Performance

? Nominal Pout of 34 dBm at 8.5 GHz

? Nominal Gain of 8.5 dB at 8.5 GHz

? Nominal PAE of 53 at 8.5 GHz

? Suitable for high reliability applications

? 4800 μm x 0.5 μm FET

? Chip dimensions: 0.61 x 1.37 x 0.1 mm (0.024 x 0.054 x 0.004 in)

? Bias at 8 Volts, 384 mA

Primary Applications

? Cellular Base Stations

? High-reliability space

? Military

產(chǎn)品屬性

  • 型號:

    TGF4250-SCC

  • 功能描述:

    射頻GaAs晶體管 DC-10.5GHz 2.5 Watt HFET

  • RoHS:

  • 制造商:

    TriQuint Semiconductor

  • 技術(shù)類型:

    pHEMT

  • 頻率:

    500 MHz to 3 GHz

  • 增益:

    10 dB

  • 噪聲系數(shù):

    正向跨導(dǎo)

  • gFS(最大值/最小值):

    4 S 漏源電壓

  • 閘/源擊穿電壓:

    - 8 V

  • 漏極連續(xù)電流:

    3 A

  • 最大工作溫度:

    + 150 C

  • 功率耗散:

    10 W

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