首頁 >TDA1458D-CMS>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SMD2.5x2.026.0MHzCrystalUnit Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
CrystalUnitSMD2.5x2.026.0MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
NPNSILICONPOWERTRANSISTORARRAYLOWSPEEDSWITCHINGUSEDARLINGTONTRANSISTORINDUSTRIALUSE DESCRIPTION TheμPA1458isNPNsiliconepitaxialDarlingtonPowerTransistorArraythatbuiltinSurgeAbsorberand4circuitsdesignedfordrivingsolenoid,relay,lampandsoon. FEATURES ?SurgeAbsorber(C-B)builtin. ?Easymountby0.1inchofterminalinterval. ?HighhFEforDarlin | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
SILICONTRANSISTORARRAY NPNSILICONPOWERTRANSISTORARRAY LOWSPEEDSWITCHINGUSE(DARLINGTONTRANSISTOR) INDUSTRIALUSE FEATURES ?SurgeAbsorber(C-B)builtin. ?Easymountby0.1inchofterminalinterval. ?HighhFEforDarlingtonTransistor. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SILICONTRANSISTORARRAY NPNSILICONPOWERTRANSISTORARRAY LOWSPEEDSWITCHINGUSE(DARLINGTONTRANSISTOR) INDUSTRIALUSE FEATURES ?SurgeAbsorber(C-B)builtin. ?Easymountby0.1inchofterminalinterval. ?HighhFEforDarlingtonTransistor. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
NPNSILICONPOWERTRANSISTORARRAYLOWSPEEDSWITCHINGUSEDARLINGTONTRANSISTORINDUSTRIALUSE DESCRIPTION TheμPA1458isNPNsiliconepitaxialDarlingtonPowerTransistorArraythatbuiltinSurgeAbsorberand4circuitsdesignedfordrivingsolenoid,relay,lampandsoon. FEATURES ?SurgeAbsorber(C-B)builtin. ?Easymountby0.1inchofterminalinterval. ?HighhFEforDarlin | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
GENERALPURPOSEDUALOPERATIONALAMPLIFIERS [NEC] | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES ?Internallyfrequency-compensated ?Shortcircuitprotection | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
GENERALPURPOSEDUALOPERATIONALAMPLIFIER SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES ?Internallyfrequency-compensated ?Shortcircuitprotection | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
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