TC55B464P-12中文資料東芝數(shù)據(jù)手冊(cè)PDF規(guī)格書

Description

The TC55B464P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 65,536 words by 4 bits and

operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.

The TC55B464P/J features low power dissipation when the device is deselected using chip enable (CE).

The TC55B464P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and

outputs are TTL compatible.

The TC55B464P/J is available in a 300mil width, 24-pin DIP and SOJ suitable for high density surface assembly.

Features

? Fast access time

TC55B464P/J-10

- TC55B464P/J-12

? Low power dissipation

Operation:

TC55B464P/J-10

- TC55B464P/J-12

- Standby:

10ns (max.)

12ns (max.)

140mA (max.)

140mA (max.)

15mA (max.)

Single 5V power supply: 5V±10

? Fully static operation

Inputs and outputs TTL compatible

? Package:

TC55B464P: DIP24-P-300B

TC55B464J: SOJ24-P-300A