TC5561P-70中文資料東芝數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

The TC5561P/J is a 65,536 bit high speed static

random access memory organized as 65,536 words

by 1 bit using CMOS technology, and Operated from

a single 5-volt supply.

Toshiba's high performance device technology

provides both high speed and low power features

with a maximum access time of 45/55/70ns and

maximum operating current of 100mA at minimum

cycle time.

The TC5561P/J also features an automatic stand-

by mode. When deselected by Chip Enable (CE), the

operating current is reduced from 100mA to 100μA.

The TC5561P/J is suitable for use in main memory

of high speed computer and pattern memory, where

high speed/low power/high density are required.

The TC5561P is moulded in a 22 pin standard

plastic SOJ with 300 ml width for high density

surface assembly.

The TC5561P/J is fabricated with ion implanted

CMOS silicon gate MOS technology for high per-

formance and high reliability.

FEATURES

Fast access time: TC5561P/J-45

TC5561P/J-55

TC5561P/J-70

Low power dissipation: Operation 100mA(MAX.)

Standby 100μA(MAX.)

5V single power supply

45ms (MAX.)

55ns (MAX.)

70ns (MAX.)

Fully static operation

Directly TTL compatible: All Input and Output

1/0 separate

Package: 22 pin standard plastic package.

300mil width: TC5561P

24 pin plastic 300 mil SOJ: TC5561J