TC551001BPL_V02中文資料東芝數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as

131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device

operates from a single 5 V ± 10 power supply. Advanced circuit technology provides both high speed and low

power at an operating current of 5 mA/MHz (typ) and a minimum cycle time of 70 ns. It is automatically placed

in low-power mode at 2 A standby current (typ) when chip enable (CE1) is asserted high or (CE2) is asserted

low. There are three control inputs. CE1 and CE2 are used to select the device and for data retention control,

and output enable (OE) provides fast memory access. This device is well suited to various microprocessor

system applications where high speed, low power and battery backup are required. The TC551001BPL/BFL/

BFTL/BTRL is available in a standard plastic 32-pin dual-in-line package (DIP), plastic 32-pin small-outline

package (SOP) and normal and reverse pinout plastic 32-pin thin-small-outline package (TSOP).

FEATURES

Low-power dissipation

Operating: 27.5 mW/MHz (typical)

Standby current of 4 A (maximum) at

Ta = 25°C

Single power supply voltage of 5 V ± 10

? Power down features using CE1 and CE2.

? Data retention supply voltage of 2 to 5.5 V

? Direct TTL compatibility for all inputs and

outputs

Access Times (maximum):

Access Time

CE1 Access Time

CE2 Access Time

OE Access Time

TC551001BPL/BFL/BFTL/BTRL

-85L

-70L

70 ns

70 ns

70 ns

35 ns

85 ns

85 ns

● Packages: DIP32-P-600 (BPL)

SOP32-P-525 (BFL)

85 ns

45 ns

-10L

100 ns

100 ns

100 ns

50 ns

(Weight: 4.45 g typ)

(Weight: 1.04 g typ)

TSOP32-P-0820 (BFTL) (Weight: 0.34 g typ)

TSOP32-P-0820A (BTRL)(Weight: 0.34 g typ)