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TC1101V中文資料TRANSCOM數(shù)據(jù)手冊(cè)PDF規(guī)格書

TC1101V
廠商型號(hào)

TC1101V

功能描述

Low Noise and Medium Power GaAs FETs

文件大小

90.14 Kbytes

頁面數(shù)量

2

生產(chǎn)廠商 Transcom, Inc.
企業(yè)簡稱

TRANSCOM

中文名稱

Transcom, Inc.官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2024-10-24 18:30:00

TC1101V規(guī)格書詳情

DESCRIPTION

The TC1101V is the same as TC1101 expect via holes in the source pads for reducing the grounding inductance. It can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier application including a wide range of commercial and military application. All devices are 100 DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.

FEATURES

Via holes for source grounding

Low Noise Figure: NF = 0.5 dB Typical at 12 GHz

High Associated Gain: Ga = 13 dB Typical at 12 GHz

High Dynamic Range: 1 dB Compression Power P-1 = 18.5 dBm at 12 GHz

Breakdown Voltage: BVDGO ≥ 9 V

Lg = 0.25 μm, Wg = 160 μm

All-Gold Metallization for High Reliability

Tight Vp ranges control

High RF input power handling capability

100 DC Tested

產(chǎn)品屬性

  • 型號(hào):

    TC1101V

  • 制造商:

    TRANSCOM

  • 制造商全稱:

    TRANSCOM

  • 功能描述:

    Low Noise and Medium Power GaAs FETs

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