SVSP11N65FD2中文資料士蘭微數(shù)據(jù)手冊PDF規(guī)格書

廠商型號	SVSP11N65FD2
功能描述	11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR
絲印標識	P11N65FD2
封裝外殼	TO-220F-3L
文件大小	413.58 Kbytes
頁面數(shù)量	10 頁
生產(chǎn)廠商	Silan Microelectronics Joint-stock
企業(yè)簡稱	SILAN【士蘭微】
中文名稱	杭州士蘭微電子股份有限公司官網(wǎng)
原廠標識
數(shù)據(jù)手冊	下載地址一下載地址二到原廠下載
更新時間	2025-5-31 13:31:00
人工找貨	SVSP11N65FD2價格和庫存，歡迎聯(lián)系客服免費人工找貨

DESCRIPTION

SVSP11N65D/F/S/FJD/K/TD2 is an N-channel enhancement mode

high voltage power MOSFETs produced using Silan’s super junction

MOS technology. It achieves low conduction loss and switching

losses. It leads the design engineers to their power converters with

high efficiency, high power density, and superior thermal behavior.

Furthermore, it’s universal applicable, i.e., suitable for hard and soft

switching topologies.

FEATURES

? 11A,650V, RDS(on)(typ.)=0.33?@VGS=10V

? New revolutionary high voltage technology

? Ultra low gate charge

? Periodic avalanche rated

? Extreme dv/dt rated

? High peak current capability