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STW7NB80中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

STW7NB80
廠商型號

STW7NB80

功能描述

N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET

文件大小

88.35 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導體

中文名稱

意法半導體集團官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-21 18:25:00

人工找貨

STW7NB80價格和庫存,歡迎聯(lián)系客服免費人工找貨

STW7NB80規(guī)格書詳情

DESCRIPTION

Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 1.6 ?

■ EXTREMELY HIGH dv/dt CAPABILITY

■ ± 30V GATE TO SOURCE VOLTAGE RATING

■ 100 AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

產(chǎn)品屬性

  • 型號:

    STW7NB80

  • 功能描述:

    MOSFET RO 512-FQA7N80

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
ST品牌
2016+
TO-247
6528
房間原裝進口現(xiàn)貨假一賠十
詢價
ST/意法
24+
TO-247
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
詢價
ST/意法半導體
22+
TO-247
25000
只做原裝進口現(xiàn)貨,專注配單
詢價
ST
22+23+
TO-247
28234
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
ST
24+
TO-3P
1000
原裝現(xiàn)貨熱賣
詢價
ST
24+
TO-247
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
詢價
ST
23+
TO-3P
18689
詢價
ST
18+
TO-247
85600
保證進口原裝可開17%增值稅發(fā)票
詢價
ST
23+
TO-3P
65480
詢價
ST
24+
TO-247
2987
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
詢價