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STW6NC90Z

N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH??II MOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateand source.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequeste

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STW6NC90Z

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=5.2A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STB6NC90Z

N-CHANNEL900V-1.55ohm-5.4ATO-220/FP/D?PAK/I?PAKZener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedby

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP6NC90Z

N-CHANNEL900V-1.55ohm-5.4ATO-220/FP/D?PAK/I?PAKZener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedby

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP6NC90ZFP

N-CHANNEL900V-1.55ohm-5.4ATO-220/FP/D?PAK/I?PAKZener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedby

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STW6NC90

N-CHANNEL900V-2.1ohm-5.2ATO-247Zener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateand source.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequeste

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

詳細參數(shù)

  • 型號：

    STW6NC90Z

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱：

    STMicroelectronics

  • 功能描述：

    N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH⑩III MOSFET

供應商型號品牌批號封裝庫存備注價格
ST
17+
TO-3P
6200
詢價
ST
23+
TO-3P
6680
全新原裝優(yōu)勢
 詢價
ST
24+
TO-3P
1000
原裝現(xiàn)貨熱賣
 詢價
ST
23+
TO-247
8795
詢價
ST
22+23+
TO-247
28255
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
ST
24+
TO-247
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
ST/意法
23+
TO-247
10000
公司只做原裝正品
 詢價
ST/意法
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ST/意法
2022
TO-247
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
ST
22+
TO-3P
6000
十年配單,只做原裝
 詢價
更多STW6NC90Z供應商 更新時間2025-1-6 16:00:00

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