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STP9NB60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STP9NB60

N - CHANNEL 600V - 0.7ohm - 9A TO-220/TO220FP PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAYprocess,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)per

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP9NB60

N-Channel 650V (D-S) Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STP9NB60FP

N - CHANNEL 600V - 0.7ohm - 9A TO-220/TO220FP PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAYprocess,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)per

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP9NB60FP

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=5.2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

9NB60

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

P9NB60FP

N-CHANNEL600V-0.7ohm-9ATO-220/TO220FPPowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAYprocess,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)per

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB9NB60

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STB9NB60

N-CHANNEL600V-0.7ohm-9A-I2PAK/D2PAKPowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    STP9NB60

  • 功能描述：

    MOSFET N-CH 600V 9A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
06+
TO-220
10000
全新原裝 絕對(duì)有貨
 詢價(jià)
ST/進(jìn)口原
17+
TO-220
6200
詢價(jià)
ST
24+
TO-220
4650
詢價(jià)
ST
23+
TO-220
5000
原裝正品,假一罰十
 詢價(jià)
ST
24+
TO-220
1000
原裝現(xiàn)貨熱賣(mài)
 詢價(jià)
ST
23+
TO-220
8795
詢價(jià)
ST
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價(jià)
ST
24+
N/A
3540
詢價(jià)
ST
2020+
TO-220
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
 詢價(jià)
ST
23+
TO-220
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)!
 詢價(jià)
更多STP9NB60供應(yīng)商 更新時(shí)間2025-2-28 10:32:00

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