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STP8N80K5

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=950mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP8N80K5

N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220 and IPAK packages

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW8N80

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW8N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8.2A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SVF8N80F

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80F

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80F

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80K

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80K

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80T

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80T

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80T

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

TSM8N80

800VN-ChannelPowerMOSFET

GeneralDescription TheTSM8N80N-ChannelenhancementmodePowerMOSFETisproducedbyplanarstripeDMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulse

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

TSM8N80CI

800VN-ChannelPowerMOSFET

GeneralDescription TheTSM8N80N-ChannelenhancementmodePowerMOSFETisproducedbyplanarstripeDMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulse

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

TSM8N80CZ

800VN-ChannelPowerMOSFET

GeneralDescription TheTSM8N80N-ChannelenhancementmodePowerMOSFETisproducedbyplanarstripeDMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulse

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    STP8N80

  • 功能描述：

    MOSFET N-Ch 800V 0.76 Ohm 6 A SuperMESH 5

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
STMicroelectronics
24+
TO-220
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
STMICRO
2405+
原廠封裝
8900
15年芯片行業(yè)經(jīng)驗(yàn)/只供原裝正品:0755-83267371鄒小姐
 詢價(jià)
ST
23+
TO220
6996
只做原裝正品現(xiàn)貨
 詢價(jià)
ST/意法半導(dǎo)體
22+
TO-220-3
6008
原裝正品現(xiàn)貨 可開增值稅發(fā)票
 詢價(jià)
ST(意法半導(dǎo)體)
23+
TO-220
8498
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
STMicroel
TO220
10265
提供BOM表配單只做原裝貨值得信賴
 詢價(jià)
ST
22+23+
TO-220
27643
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
ST
14+
TO220
1000
向鴻原裝正品/代理渠道/現(xiàn)貨優(yōu)勢
 詢價(jià)
ST
2020+
TO-220
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
ST/意法
23+
TO-220
30000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢
 詢價(jià)
更多STP8N80供應(yīng)商 更新時(shí)間2025-1-13 20:17:00

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