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STP7NA60

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP7NA60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=7.2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP7NA60FI

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP7NA60FI

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

P7NA60

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

P7NA60FI

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

PJD7NA60

600VN-ChannelMOSFET

Features ?RDS(ON),VGS@10V,ID@3.5A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJD7NA60

600VN-ChannelMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJF7NA60

600VN-ChannelMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJF7NA60

600VN-ChannelMOSFET

Features ?RDS(ON),VGS@10V,ID@3.5A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJP7NA60

600VN-ChannelMOSFET

Features ?RDS(ON),VGS@10V,ID@3.5A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJP7NA60

600VN-ChannelMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJU7NA60

600VN-ChannelMOSFET

Features ?RDS(ON),VGS@10V,ID@3.5A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJU7NA60

600VN-ChannelMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

詳細(xì)參數(shù)

  • 型號:

    STP7NA60

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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8795
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16+
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2020+
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2987
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24+
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6430
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93480
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更多STP7NA60供應(yīng)商 更新時(shí)間2025-1-11 10:32:00