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STP28NM60ND

N-channel 600 V, 0.13 廓 typ., 23 A FDmesh??II Power MOSFETs in D?PAK, TO-220FP, TO-220 and TO-247 packages

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP28NM60ND

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STB28NM60ND

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STB28NM60ND

N-channel600V,0.13廓typ.,23AFDmesh??IIPowerMOSFETsinD?PAK,TO-220FP,TO-220andTO-247packages

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STF28NM60ND

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STF28NM60ND

N-channel600V,0.13廓typ.,23AFDmesh??IIPowerMOSFETsinD?PAK,TO-220FP,TO-220andTO-247packages

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STW28NM60ND

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STW28NM60ND

N-channel600V,0.13廓typ.,23AFDmesh??IIPowerMOSFETsinD?PAK,TO-220FP,TO-220andTO-247packages

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

詳細參數(shù)

  • 型號：

    STP28NM60ND

  • 制造商：

    STMicroelectronics

  • 功能描述：

    N-CHANNEL 600 V, 0.120 OHM TYP., 24 A FDMESH(TM) II POWER MO - Rail/Tube

  • 功能描述：

    MOSFET N-CH 600V 24A TO-220AB

  • 功能描述：

    N-channel 600 V, 0.120 Ohm typ., 24 A, TO-220

  • 功能描述：

    N-channel 600 V 0 120 Ohm typ 24 A

供應(yīng)商型號品牌批號封裝庫存備注價格
STMICRO
2405+
原廠封裝
8900
15年芯片行業(yè)經(jīng)驗/只供原裝正品:0755-83267371鄒小姐
 詢價
STM
21+
1000
TO-220-3
 詢價
ST/意法半導體
22+
TO-220-3
6004
原裝正品現(xiàn)貨 可開增值稅發(fā)票
 詢價
STM
23+
TO-220-3
1000
原裝現(xiàn)貨支持送檢
 詢價
ST/意法半導體
2023
TO-220-3
6000
公司原裝現(xiàn)貨/支持實單
 詢價
ST
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
ST
22+
TO-220-3
2000
原裝價優(yōu)
 詢價
STMicroelectronics
18+
NA
3000
進口原裝正品優(yōu)勢供應(yīng)QQ3171516190
 詢價
ST
23+
TO-220
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
ST原裝
22+23+
TO-220
23897
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
更多STP28NM60ND供應(yīng)商 更新時間2025-1-1 13:30:00

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