首頁>STP20N65M5>規(guī)格書詳情
STP20N65M5中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
STP20N65M5 |
| 功能描述 | N-channel 650 V, 0.160 廓 typ., 18 A MDmesh??V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages |
| 文件大小 |
1.17545 Mbytes |
| 頁面數(shù)量 |
21 頁 |
| 生產(chǎn)廠商 | STMicroelectronics |
| 企業(yè)簡稱 |
STMICROELECTRONICS【意法半導體】 |
| 中文名稱 | 意法半導體集團官網(wǎng) |
| 原廠標識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-1-29 17:24:00 |
STP20N65M5規(guī)格書詳情
Features
■ Worldwide best RDS(on) * area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100 avalanche tested
Applications
■ Switching applications
Description
These devices are N-channel MDmesh? V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH? horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency
產(chǎn)品屬性
- 型號：
STP20N65M5
- 功能描述：
MOSFET N-Ch 650V 0.168 Ohm 18A Mdmesh V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
21+ |
NA |
15250 |
只做原裝,假一罰十 |
詢價 | ||
ST |
22+ |
NA |
2450 |
原裝正品支持實單 |
詢價 | ||
ST/意法半導體 |
21+ |
TO-220-3 |
8860 |
原裝現(xiàn)貨,實單價優(yōu) |
詢價 | ||
ST/意法 |
24+ |
TO-220 |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
ST |
TO-220 |
399000 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
ST/意法 |
23+ |
NA |
25630 |
原裝正品 |
詢價 | ||
ST |
22+23+ |
TO247 |
19754 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
ST |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價 | ||||
ST/意法半導體 |
21+ |
TO-220-3 |
8860 |
只做原裝,質(zhì)量保證 |
詢價 | ||
ST/意法半導體 |
23+ |
TO-220-3 |
12820 |
正規(guī)渠道,只有原裝! |
詢價 |
