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STP13NM50N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.32Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP13NM50N

N-channel 500V - 0.250廓 - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh??Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STP13NM50N

N-channel 500 V - 0.250 廓 - 12 A MDmesh??II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STB13NM50N

N-channel500V-0.250廓-12A-TO-220/FP-TO-247-I2/D2PAKSecondgenerationMDmesh??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STB13NM50N

N-channel500V-0.250廓-12AMDmesh??IIPowerMOSFETTO-220-TO-247-TO-220FP-I2PAK-D2PAK

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STB13NM50N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.32Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STD13NM50N

N-channel500V,0.285Ωtyp.,12AMDmesh?IIPowerMOSFETinaDPAKpackage

Features ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgeneration ofMDmesh?technology.ThisrevolutionaryPowerMOSFETas

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STF13NM50N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.32Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF13NM50N

N-channel500V-0.250廓-12AMDmesh??IIPowerMOSFETTO-220-TO-247-TO-220FP-I2PAK-D2PAK

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STF13NM50N

N-channel500V-0.250廓-12A-TO-220/FP-TO-247-I2/D2PAKSecondgenerationMDmesh??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STW13NM50N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.32Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW13NM50N

N-channel500V-0.250廓-12AMDmesh??IIPowerMOSFETTO-220-TO-247-TO-220FP-I2PAK-D2PAK

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STW13NM50N

N-channel500V-0.250廓-12A-TO-220/FP-TO-247-I2/D2PAKSecondgenerationMDmesh??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

詳細(xì)參數(shù)

  • 型號：

    STP13NM50N

  • 功能描述：

    MOSFET N Ch 600V 8A Pwr MESH IGBT

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
24+
TO-220-3
1000
詢價
ST
17+
TO-220
6200
詢價
ST
24+
TO-220
5000
原裝現(xiàn)貨熱賣
 詢價
ST
2016+
TO-220
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
 詢價
STMicro.
23+
TO-220
7750
全新原裝優(yōu)勢
 詢價
ST
24+
08+
1
原裝現(xiàn)貨假一罰十
 詢價
ST
24+
TO-220
5000
只做原裝公司現(xiàn)貨
 詢價
ST
24+
TO-220
65300
一級代理/放心購買!
 詢價
S
23+
TO-220
10000
公司只做原裝正品
 詢價
22+
NA
3000
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
更多STP13NM50N供應(yīng)商 更新時間2025-1-15 10:02:00

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