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STI14NM65N

N-channel 650 V, 0.33 廓, 12 A MDmesh??II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’slowestonresistanceandgatecharge.Itisthereforesuitableforthemos

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STI14NM65N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.38Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

14NM65N

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

STB14NM65N

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

STB14NM65N

N-channel650V,0.33廓,12AMDmesh??IIPowerMOSFETTO-220,TO-220FP,D2PAK,I2PAK,TO-247

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’slowestonresistanceandgatecharge.Itisthereforesuitableforthemos

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB14NM65N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.38Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF14NM65N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.38Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF14NM65N

N-channel650V,0.33廓,12AMDmesh??IIPowerMOSFETTO-220,TO-220FP,D2PAK,I2PAK,TO-247

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’slowestonresistanceandgatecharge.Itisthereforesuitableforthemos

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP14NM65N

N-channel650V,0.33廓,12AMDmesh??IIPowerMOSFETTO-220,TO-220FP,D2PAK,I2PAK,TO-247

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’slowestonresistanceandgatecharge.Itisthereforesuitableforthemos

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW14NM65N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.38Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    STI14NM65N

  • 功能描述：

    MOSFET N-Ch, 650V-0.33ohms 12A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
17+
I2PAK
6200
詢價
ST全系列
22+23+
I2PAK
26578
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價
STM原廠目錄
24+
I2PAK
28500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
 詢價
22+
NA
3000
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
STS
1535+
979
詢價
ST
22+
TO2623 Long Leads I2Pak TO262A
9000
原廠渠道,現(xiàn)貨配單
 詢價
STMICROELECTRONICSASIA
22+
NA
30000
100%全新原裝 假一賠十
 詢價
ST
19+
TO-262
500
進(jìn)口原裝現(xiàn)貨假一賠萬力挺實(shí)單
 詢價
ST/意法
22+
IPAK
100000
代理渠道/只做原裝/可含稅
 詢價
STMicroelectronics
2022+
TO-262-3,長引線,I2Pak,TO-26
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價
更多STI14NM65N供應(yīng)商 更新時間2025-1-22 16:51:00

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