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STH10N80K5-2AG中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
STH10N80K5-2AG |
| 功能描述 | Automotive-grade N-channel 800 V, 0.60 Ω typ., 8 A MDmesh K5 Power MOSFET in an H2PAK-2 package |
| 絲印標(biāo)識(shí) | |
| 封裝外殼 | H2PAK-2 |
| 文件大小 |
424.56 Kbytes |
| 頁(yè)面數(shù)量 |
14 頁(yè) |
| 生產(chǎn)廠商 | STMicroelectronics |
| 企業(yè)簡(jiǎn)稱 |
STMICROELECTRONICS【意法半導(dǎo)體】 |
| 中文名稱 | 意法半導(dǎo)體集團(tuán)官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-4-21 22:30:00 |
| 人工找貨 | STH10N80K5-2AG價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
STH10N80K5-2AG規(guī)格書詳情
Features
? AEC-Q101 qualified
? Industry’s lowest RDS(on) x area
? Industry’s best FoM (figure of merit)
? Ultra-low gate charge
? 100 avalanche tested
Applications
? Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5
technology based on an innovative proprietary vertical structure. The result is a
dramatic reduction in on-resistance and ultra-low gate charge for applications
requiring superior power density and high efficiency.
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TO-263 |
6000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
STMicroelectronics |
24+ |
H2Pak-2 |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
ST/意法 |
21+ |
TO263 |
20000 |
詢價(jià) | |||
Norsat |
24+ |
模塊 |
400 |
詢價(jià) | |||
ST |
23+ |
TO-247 |
8795 |
詢價(jià) | |||
24+ |
N/A |
3560 |
詢價(jià) | ||||
ST |
2020+ |
TO-3P |
350000 |
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存 |
詢價(jià) | ||
ST |
06+ |
TO-247 |
2000 |
原裝 |
詢價(jià) | ||
ST |
23+ |
TO2633 D2Pak (2 Leads + Tab) V |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
S |
22+ |
TO |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) |
