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STF6N60M2

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=4.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STF6N60M2

Extremely low gate charge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficiency

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF6N60M2

N-Channel 650V (D-S) Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STB6N60M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD6N60M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STN6N60M2

N-channel600V,1.00typ.,5.5AMDmeshM2PowerMOSFETinanSOT223-2package

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(Coss)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP6N60M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STP6N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficiency

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STU6N60M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STU6N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficiency

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    STF6N60M2

  • 制造商：

    STMicroelectronics

  • 功能描述：

    POWER MOSFET - Rail/Tube

  • 功能描述：

    MOSFET N-Channel 600V 4.5A TO-220FP

  • 功能描述：

    N-channel 600V,1.06Ohm,4.5A Power MOSFET

  • 功能描述：

    600V,1.06,4.5A,N-Channel Power MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
STMicroelectronics
24+
TO-220FP
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢(xún)價(jià)
ST/意法半導(dǎo)體
22+
TO-220FP-3
6005
原裝正品現(xiàn)貨 可開(kāi)增值稅發(fā)票
 詢(xún)價(jià)
STM
23+
TO-220FP-3
10000
原裝現(xiàn)貨支持送檢
 詢(xún)價(jià)
ST/意法半導(dǎo)體
2023
TO-220FP-3
6000
公司原裝現(xiàn)貨/支持實(shí)單
 詢(xún)價(jià)
ST(意法半導(dǎo)體)
23+
TO-220F
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢(xún)價(jià)
ST/意法半導(dǎo)體
24+
TO-220FP-3
4650
絕對(duì)原裝公司現(xiàn)貨
 詢(xún)價(jià)
ST
24+
TO-220-3
80000
原廠正規(guī)渠道現(xiàn)貨、保證原裝正品
 詢(xún)價(jià)
STMicroelectronics
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190
 詢(xún)價(jià)
ST
24+
TO-220FP
50000
ST一級(jí)代理專(zhuān)營(yíng)品牌絕對(duì)進(jìn)口原裝假一賠十
 詢(xún)價(jià)
ST
24+
35200
一級(jí)代理/放心采購(gòu)
 詢(xún)價(jià)
更多STF6N60M2供應(yīng)商 更新時(shí)間2025-1-1 14:14:00

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