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STF19NM65N

N-channel 650 V - 0.25 廓 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh??Power MOSFET

Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STF19NM65N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=15.5A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.27Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STB19NM65N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15.5A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.27Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STI19NM65N

N-channel650V-0.25廓-15.5A-TO-220/FP-D2/I2PAK-TO-247secondgenerationMDmesh??PowerMOSFET

Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STI19NM65N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15.5A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.27Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STP19NM65N

N-channel650V-0.25廓-15.5A-TO-220/FP-D2/I2PAK-TO-247secondgenerationMDmesh??PowerMOSFET

Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STW19NM65N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15.5A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.27Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STW19NM65N

N-channel650V-0.25廓-15.5A-TO-220/FP-D2/I2PAK-TO-247secondgenerationMDmesh??PowerMOSFET

Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

詳細參數(shù)

  • 型號：

    STF19NM65N

  • 功能描述：

    MOSFET N-Channel 650V 0.25 Ohms 15.5A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
19+
TO-220F
11326
詢價
ST
23+
TO220F
6996
只做原裝正品現(xiàn)貨
 詢價
ST
17+
TO-220F
6200
詢價
ST
24+
TO220ISOFULLPACK
8866
詢價
ST全系列
22+23+
TO-220F
26338
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
原裝STM
19+
TO220F
20000
原裝現(xiàn)貨假一罰十
 詢價
ST
1942+
TO220F
9852
只做原裝正品現(xiàn)貨或訂貨!假一賠十!
 詢價
ST
2020+
TO-220F
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
原裝STM
24+
TO220F
35200
一級代理/放心采購
 詢價
ST
08+PBF
TO220
50
現(xiàn)貨
 詢價
更多STF19NM65N供應(yīng)商 更新時間2025-1-18 16:04:00

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