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STB10N60M2

N-channel600V,0.550typ.,7.5AMDmeshIIPluslowQgPowerMOSFETsinD?PAK

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB10N60M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STD10N60M2

N-channel600V,0.550typ.,7.5AMDmeshIIPluslowQgPowerMOSFETsinD?PAK

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STD10N60M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STF10N60M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STFH10N60M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STL10N60M2

N-channel600V,0.580廓typ.,5.5AMDmeshIIPlus??lowQgPowerMOSFETinaPowerFLAT??5x6HVpackage

Description ThisdeviceisanN-channelPowerMOSFET developedusinganewgenerationofMDmesh? technology:MDmeshIIPlus?lowQg.This revolutionaryPowerMOSFETassociatesa verticalstructuretothecompany'sstriplayoutto yieldoneoftheworld'sloweston-resistanceand gatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP10N60M2

N-channel600V,0.550typ.,7.5AMDmeshIIPluslowQgPowerMOSFETsinD?PAK

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP10N60M2

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

STP10N60M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
原廠原封
93480
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
ST
22
TO-220F
25000
3月31原裝,微信報價
 詢價
ST
20+
TO-220F
25000
全新原裝現(xiàn)貨 假一賠十
 詢價
ST/意法
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ST/意法
2022
TO-220F
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
ST/意法
22+
TO-220FP
34137
只做原裝進口現(xiàn)貨
 詢價
ST/意法
23+
TO-220
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
ST
17+
TO-220F
6200
100%原裝正品現(xiàn)貨
 詢價
ST
2020+
TO220F
80
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
ST
2016+
TO-220F
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
 詢價
更多STF10N60M2(045Y)供應(yīng)商 更新時間2025-2-1 17:08:00

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