STD70N10F4

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.0195Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STD70N10F4

N溝道100 V、0.015 Ohm、60 A STripFET(TM) DeepGATE(TM) 功率MOSFET，DPAK封裝; ? Exceptional dv/dt capability \n? 100% avalanche tested \n? Extremely low on-resistance RDS(on);

This STripFET? DeepGATE? Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performance.\n\n

STD70N10F4

N-channel 100 V, 0.015 廓, 60 A, STripFET??DeepGATE??Power MOSFET in TO-220, DPAK, TO-247, D2PAK

STI70N10F4

N-channel100V,0.015Ω,60A,STripFET?DeepGATE?PowerMOSFETinI2PAK

Features ■Exceptionaldv/dtcapability ■Extremelylowon-resistanceRDS(on) ■100avalanchetested Application ■Switchingapplications Description ThisSTripFET?DeepGATE?PowerMOSFET technologyisamongthelatestimprovements, whichhavebeenespeciallytailoredtominimize on-

STP70N10F4

N-Channel100-V(D-S)MOSFET

STP70N10F4

N-channel100V,0.015廓,60A,STripFET??DeepGATE??PowerMOSFETinTO-220,DPAK,TO-247,D2PAK