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STD30NF06

N-CHANNEL 60V - 0.020 ohm - 28A IPAK/DPAK STripFET??II POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize?stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkab

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STD30NF06

60V N-Channel Enhancement Mode Power MOSFET

GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司

STD30NF06

60V N-Channel Enhancement Mode Power MOSFET

GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnolo

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

STD30NF06L

N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET??POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize?”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STD30NF06L

60V N-Channel Enhancement Mode Power MOSFET

GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司

STD30NF06L

60V N-Channel Enhancement Mode Power MOSFET

GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnolo

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

STD30NF06LAG

Automotive-grade N-channel 60 V, 0.022 Ω typ., 35 A STripFET? II Power MOSFET in a DPAK package

Features ?AEC-Q101qualified ?Lowthresholddrive ?Gatechargeminimized Description ThisPowerMOSFETseriesrealizedwith STMicroelectronicsuniqueSTripFET?process isspecificallydesignedtominimizeinput capacitanceandgatecharge.Itisthereforeideal asaprimaryswitchin

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STD30NF06LT4

N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET??POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize?”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STD30NF06-1

N-Channel 60 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

STD30NF06L-1

N-Channel 60 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

詳細參數(shù)

  • 型號：

    STD30NF06

  • 功能描述：

    MOSFET N-Ch 60 Volt 28 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
ST/意法
24+
TO-252
20000
只做原廠渠道 可追溯貨源
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ST/意法
24+
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504495
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ST
24+
TO-252
7500
詢價
ST
23+
TO-252
8795
詢價
ST
24+
08+
2
原裝現(xiàn)貨假一罰十
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SR
23+
TO-252
5000
原裝正品,假一罰十
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ST
23+
TO-252
8650
受權代理!全新原裝現(xiàn)貨特價熱賣!
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ST
17+
TO-252
60000
保證進口原裝可開17%增值稅發(fā)票
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ST
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風險!!
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ST
18+
TO-252
41200
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更多STD30NF06供應商 更新時間2025-6-2 16:36:00

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