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STP30NE03L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance; -RDS(on)=0.04Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP30NE03L

N-CHANNEL30V-0.028ohm-30ATO-220/TO-220FPSTripFETPOWERMOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize?”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearem

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP30NE03LFP

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=17A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance; -RDS(on)=0.04Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP30NE03LFP

N-CHANNEL30V-0.028ohm-30ATO-220/TO-220FPSTripFETPOWERMOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize?”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearem

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

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