首頁(yè) >STB13N80K5>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
STB13N80K5 | N-channel 800 V, 0.37, 12 A Zener-protected SuperMESH 5 Power MOSFET in D?PAK, TO-220FP and TO-220 packages Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh?K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
STB13N80K5 | N-channel 800 V, 0.37 Ω typ., 12 A MDmesh? K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 Features ?Industry’slowestRDS(on)xarea ?Industry’sbestFoM(figureofmerit) ?Ultra-lowgatecharge ?100avalanchetested ?Zener-protected Applications ?Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh?K5 techno | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
N-channel 800 V, 0.37 Ω typ., 12 A MDmesh? K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 Features ?Industry’slowestRDS(on)xarea ?Industry’sbestFoM(figureofmerit) ?Ultra-lowgatecharge ?100avalanchetested ?Zener-protected Applications ?Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh?K5 techno | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel800V,0.37Ωtyp.,12AMDmesh?K5PowerMOSFETsinD2PAK,TO-220FP,TO-220andTO-247 Features ?Industry’slowestRDS(on)xarea ?Industry’sbestFoM(figureofmerit) ?Ultra-lowgatecharge ?100avalanchetested ?Zener-protected Applications ?Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh?K5 techno | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel800V,0.37,12AZener-protectedSuperMESH5PowerMOSFETinD?PAK,TO-220FPandTO-220packages Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh?K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel800V,0.37??typ.,12AMDmesh??K5PowerMOSFETinanI?PAKFPpackage Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmesh?K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhighefficie | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.45Ω(Max)@VGS=10V APPLICATIONS ·Switching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel800V,0.37廓typ.,12AMDmesh??K5PowerMOSFETinaTO-220FPultranarrowleadspackage | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel800V,0.37,12AZener-protectedSuperMESH5PowerMOSFETinD?PAK,TO-220FPandTO-220packages Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh?K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel800V,0.37Ωtyp.,12AMDmesh?K5PowerMOSFETsinD2PAK,TO-220FP,TO-220andTO-247 Features ?Industry’slowestRDS(on)xarea ?Industry’sbestFoM(figureofmerit) ?Ultra-lowgatecharge ?100avalanchetested ?Zener-protected Applications ?Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh?K5 techno | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel800V,0.37Ωtyp.,12AMDmesh?K5PowerMOSFETsinD2PAK,TO-220FP,TO-220andTO-247 Features ?Industry’slowestRDS(on)xarea ?Industry’sbestFoM(figureofmerit) ?Ultra-lowgatecharge ?100avalanchetested ?Zener-protected Applications ?Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh?K5 techno | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
詳細(xì)參數(shù)
- 型號(hào):
STB13N80K5
- 制造商:
STMicroelectronics
- 功能描述:
POWER MOSFET - Tape and Reel
- 功能描述:
MOSFET N-CH 800V 12A D2PAK
- 功能描述:
STB13N80K5 Series N-Channel 800 V 0.45 Ohm SMT SuperMESH5 Power Mosfet - D2PAK
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
STMicroelectronics |
24+ |
D2PAK(TO-263) |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
ST |
23+ |
TO-263 |
18961 |
公司優(yōu)勢(shì)庫(kù)存熱賣全新原裝!歡迎來電 |
詢價(jià) | ||
STM |
21+ |
TO-263-3 (D2PAK) |
3000 |
原裝正品 有掛有貨 |
詢價(jià) | ||
STM |
19+/20+ |
3000 |
TO-263-3 (D2PAK) |
詢價(jià) | |||
ST/意法半導(dǎo)體 |
22+ |
TO-263-3 |
6000 |
原裝正品現(xiàn)貨 可開增值稅發(fā)票 |
詢價(jià) | ||
STM |
23+ |
TO-263-3 (D2PAK) |
3000 |
原裝現(xiàn)貨支持送檢 |
詢價(jià) | ||
ST/意法半導(dǎo)體 |
2023 |
TO-263-3 |
6000 |
公司原裝現(xiàn)貨/支持實(shí)單 |
詢價(jià) | ||
ST(意法半導(dǎo)體) |
23+ |
D2PAK |
8498 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢價(jià) | ||
ST/意法 |
23+ |
D2PAK |
360000 |
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量?jī)r(jià)格低 |
詢價(jià) | ||
STMicroelectronics |
18+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190 |
詢價(jià) |
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