DESCRIPTION

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.

■ IMPROVED SPECIFICATION:

- LOWER LEAKAGE CURRENT

- TIGHTER GAIN RANGE

- DC CURRENT GAIN PRESELECTION

- TIGHTER STORAGE TIME RANGE

■ HIGH VOLTAGE CAPABILITY

■ INTEGRATED FREE-WHEELING DIODE

■ LOW SPREAD OF DYNAMIC PARAMETERS

■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

■ VERY HIGH SWITCHING SPEED

■ FULLY CHARACTERIZED AT 125 °C

■ LARGE RBSOA

■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING

APPLICATIONS

■ UP TO 120W ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS

■ SWITCH MODE POWER SUPPLIES

ST13007DFP屬于分立半導體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個。意法半導體（ST）集團制造生產(chǎn)的ST13007DFP晶體管 - 雙極性晶體管（BJT）- 單個分立式雙極結型晶體管 (BJT) 通常在音頻、無線電及其他應用中用于構建模擬信號放大功能。作為大批量生產(chǎn)的第一批半導體器件之一，對于涉及高頻開關和在大電流或高電壓下工作的應用而言，它們的特性相比某些器件類型不占優(yōu)勢，但對于需要以極小的噪聲和失真構建模擬信號的應用而言，它們?nèi)匀皇鞘走x技術。