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SSM6N25TU

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

SSM6N25TU

High Speed Switching Applications

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

6N25

FastSwitchingSpeed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDD6N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDD6N25

250VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDD6N25TF

250VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDD6N25TM

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDD6N25TM

250VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDU6N25

250VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDU6N25TU

250VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB6N25

250VN-ChannelMOSFET

Features ?5.5A,250V,RDS(on)=1.0?@VGS=10V ?Lowgatecharge(typical6.6nC) ?LowCrss(typical7.5pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD6N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQD6N25

250VN-ChannelMOSFET

250VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD6N25TM

N-ChannelQFETMOSFET250V,4.4A,1.0

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI6N25

250VN-ChannelMOSFET

Features ?5.5A,250V,RDS(on)=1.0?@VGS=10V ?Lowgatecharge(typical6.6nC) ?LowCrss(typical7.5pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP6N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.5A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQP6N25

250Vn-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF6N25

250VN-ChannelMOSFET

250VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU6N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQU6N25

250VN-ChannelMOSFET

250VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

詳細參數

  • 型號:

    SSM6N25TU

  • 制造商:

    TOSHIBA

  • 制造商全稱:

    Toshiba Semiconductor

  • 功能描述:

    High Speed Switching Applications

供應商型號品牌批號封裝庫存備注價格
TOSHIBA/東芝
24+
UF6
45000
熱賣優(yōu)勢現貨
詢價
TOSHIBA
16+
UF6
11560
原裝現貨假一罰十
詢價
TOSHIBA/東芝
22+
SOT363
600000
航宇科工半導體-央企優(yōu)秀戰(zhàn)略合作伙伴!
詢價
TOSHIBA/東芝
24+
SOT363
2780
原廠授權代理 價格絕對優(yōu)勢
詢價
TOSHIBA/東芝
2019+PB
UF6
42590
原裝正品 可含稅交易
詢價
TOSHIBA/東芝
23+
SOT-363
360000
專業(yè)供應MOS/LDO/晶體管/有大量價格低
詢價
TOSHIBA
2020+
SOT363
5658
百分百原裝正品 真實公司現貨庫存 本公司只做原裝 可
詢價
TOSHIBA
24+
SOT-363
5000
只做原裝公司現貨
詢價
TOSHIBA/東芝
22+
SOT363
33175
原裝正品現貨
詢價
TOSHIBA
19+
UF6
200000
詢價
更多SSM6N25TU供應商 更新時間2024-12-27 16:21:00