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FQB6N15

150VN-ChannelMOSFET

Features ?6.4A,150V,RDS(on)=0.6?@VGS=10V ?Lowgatecharge(typical6.5nC) ?LowCrss(typical9.6pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability ?175°Cmaximumjunctiontemperaturerating

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD6N15

150VN-ChannelMOSFET

150VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQI6N15

150VN-ChannelMOSFET

Features ?6.4A,150V,RDS(on)=0.6?@VGS=10V ?Lowgatecharge(typical6.5nC) ?LowCrss(typical9.6pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability ?175°Cmaximumjunctiontemperaturerating

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP6N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.4A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQP6N15

150VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF6N15

150VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU6N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.2A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQU6N15

150VN-ChannelMOSFET

150VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MTD6N15

TMOSPOWERFET6.0AMPERES150VOLTSRDS(on)=0.3OHM

PowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisTMOSPowerFETisdesignedforhighspeed,lowlosspowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSp

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD6N15

PowerFieldEffectTransistorDPAKforSurfaceMount

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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TOSHIBA/東芝
2402+
SOT-363
8324
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23+
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50000
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TOSHIBA
23+
SOT563
8560
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TOSHIBA
1922+
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6852
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TOSHIBA
2020+
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80000
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TOSHIBA
13+
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TOSHIBA
23+
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50000
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TOSHIBA/東芝
21+
SOT-563
10000
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TOSHIBA/東芝
2022
SOT-563
80000
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TOSHIBA/東芝
23+
SOT363
11200
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更多SSM6N15AFEAPL供應(yīng)商 更新時(shí)間2025-1-29 16:12:00

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