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SPU03N60S5

isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-251(IPAK)packaging ?Highspeedswitching ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Powersupply ?DC-DCconverters ?Motorcontrol ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPU03N60S5

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPU03N60S5

Cool MOS Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPU03N60S5

N-Channel 650V (D-S) Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

SPU03N60S5_08

Cool MOS Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

03N60S5

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

03N60S5

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

ISPD03N60S5

N-ChannelMOSFETTransistor

?DESCRITION ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤1.4? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISPP03N60S5

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Ultraloweffectivecapacitance ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤1.4? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perf

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPB03N60S5

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB03N60S5

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB03N60S5

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB03N60S5

HighPowerFactorLEDReplacementT8FluorescentTube

Introduction ThisapplicationnotedescribestheprinciplesanddesignequationsrequiredforthedesignofahighbrightnessLEDlampusingtheAL9910.Theequationsarethenusedtodemonstratethedesignofauniversal,offline,highpowerfactor(PF),13WLEDlampsuitableforuseasthere

DIODES

Diodes Incorporated

SPB03N60S5

PWMhigh-efficiencyLEDdrivercontrolIC

DIODES

Diodes Incorporated

SPB03N60S5

N-Channel650V(D-S)MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

SPB03N60S5

PWMhigh-efficiencyLEDdrivercontrolIC.

DIODES

Diodes Incorporated

SPB03N60S5

AL9910EV4Evaluationboardconnectiondiagram

DIODES

Diodes Incorporated

SPD03N60S5

N-ChannelMOSFETTransistor

?DESCRITION ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤1.4? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPD03N60S5

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPN03N60S5

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號:

    SPU03N60S5

  • 功能描述:

    MOSFET COOL MOS N-CH 600V 3.2A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
24+
TO251
5000
原廠授權(quán)代理 價格絕對優(yōu)勢
詢價
英飛翎
17+
IPAK(TO-251)
31518
原裝正品 可含稅交易
詢價
Infineon(英飛凌)
23+
-
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價
INFINEON
16+
原廠封裝
48130
原裝現(xiàn)貨假一罰十
詢價
INFINEON
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
INFINEON
22+
P-TO251-3-1
8000
原裝現(xiàn)貨庫存.價格優(yōu)勢
詢價
INFINE0N
23+
TO-251
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
infineon
22+23+
TO-251
26886
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
INFINOEN
1822+
TO-251
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
詢價
INFINOEN
18+
TO-251
41200
原裝正品,現(xiàn)貨特價
詢價
更多SPU03N60S5供應(yīng)商 更新時間2024-10-26 9:02:00