首頁 >SPN03N60C3>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
SPN03N60C3 | Cool MOS??Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
SPN03N60C3 | Cool MOS Power Transistor Feature | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
Cool MOS Power Transistor Feature | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-Channel650V(D-S)PowerMOSFET FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Ultralowcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤1.4? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perform | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
COOLMOSPOWERTRANSISTOR | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Features ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細參數(shù)
- 型號:
SPN03N60C3
- 功能描述:
MOSFET COOL MOS PWR TRANS 650V .7A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
24+ |
TO-223 |
5000 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
INFINEON |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
Infineon |
17+ |
SOT-223 |
6200 |
詢價 | |||
INFINEON |
12+ |
SOT-223 |
15000 |
全新原裝,絕對正品,公司現(xiàn)貨供應。 |
詢價 | ||
INFINEON |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
INFINEON |
22+ |
P-SOT223-4-4 |
15276 |
原裝現(xiàn)貨庫存.價格優(yōu)勢 |
詢價 | ||
INFINE0N |
23+ |
SOT-223 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
INFINEO |
22+23+ |
SOT-223 |
16150 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
Infineon/英飛凌 |
1937+ |
SOT-223 |
9852 |
只做進口原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
INFINEON |
429 |
591 |
原裝正品 |
詢價 |
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