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SPI20N60CFD

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Intrinsicfast-recoverybodydiode ?Extremelowreverserecoverycharge ?Pb-freeleadplating;

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI20N60CFD

isc N-Channel MOSFET Transistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.22? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP20N60CFD

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.22? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP20N60CFD

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N60CFD

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N60CFD

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Intrinsicfast-recoverybodydiode ?Extremelowreverserecoverycharge ?Pb-freeleadplating;

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW20N60CFD

iscN-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤220m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPW20N60CFD

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Intrinsicfast-recoverybodydiode ?Extremelowreverserecoverycharge

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW20N60CFD

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SSF20N60H

Highdv/dtandavalanchecapabilities

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

詳細參數(shù)

  • 型號：

    SPI20N60CFD

  • 功能描述：

    MOSFET COOL MOS PWR TRANS 650V 0.22 Ohms

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
24+
TO-262
3455
原裝原廠代理 可免費送樣品
 詢價
INFINEON
24+
PG-TO262-3I2PAK(TO
8866
詢價
INFINEON
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
INFINEON/英飛凌
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
INFINEON/英飛凌
23+
TO-262
9990
原裝正品，支持實單
 詢價
INFINEON
0622+
TO-262
3455
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
INFINEON/英飛凌
24+
NA/
6705
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
 詢價
INFINEON/英飛凌
22+
TO-262
20000
原裝現(xiàn)貨,實單支持
 詢價
INFINEON/英飛凌
22+
TO-262
18800
詢價
INFINEON
24+
TO-262
6000
公司渠道現(xiàn)貨
 詢價
更多SPI20N60CFD供應(yīng)商 更新時間2025-6-22 14:03:00

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