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04P10P

P-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

04P10PL

P-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

BZW04P10

TransientVoltageSuppressor

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W Features ?Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ?Glasspassivatedjunction ?400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ?Excellen

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

BZW04P10

AXIALLEADEDTRANSIENTVOLTAGESUPPRESSORSDIODES

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

BZW04P10

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

MDE

MDE Semiconductor, Inc.

BZW04P10

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ?GlasspassivatedchipjunctioninDO-41package ?400Wsurgecapabilityat1ms ?Excellentclampingcapability ?Lowzenerimpedance ?Lowincrementalsurgeresistance ?Excellentclampingcapability

MDE

MDE Semiconductor, Inc.

BZW04P10

MINITYPELEDLAMPS

DBLECTRODB Lectro Inc

迪貝電子

BZW04P10

TRANSIENTVOLTAGESUPPRESSOR

VBR:6.8-440Volts PPK:400Watts FEATURES: *400Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min) *TypicalIRlessthen1mAabove10V

EIC

EIC discrete Semiconductors

BZW04P10

TransZorbTransientVoltageSuppressors

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BZW04P10

TRANSIENTVOLTAGESUPPRESSOR

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W FEATURES ?Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ?Glasspassivatedjunction ?400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ?Excellentclampingc

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

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