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SPD04N60S5

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD04N60S5

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD04N60S5

N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPD04N60S5

Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

SPDU04N60S5

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPN04N60S5

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inSOT223 ?Ultralowgatecharge ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPN04N60S5

NewrevolutionaryhighvoltagetechnologyWorldwidebestRDSinSOT223

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP04N60S5

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP04N60S5

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Ultraloweffectivecapacitance ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.95? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice per

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP04N60S5

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP04N60S5

NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPPB04N60S5

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPU04N60S5

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

SPU04N60S5

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-251(IPAK)packaging ?Highspeedswitching ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Powersupply ?DC-DCconverters ?Motorcontrol ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPU04N60S5

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPU04N60S5

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPU04N60S5

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號:

    SPD04N60S5

  • 功能描述:

    MOSFET COOL MOS N-CH 600V 4.5A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
23+
TO252
6996
只做原裝正品現(xiàn)貨
詢價
INFINEON/英飛凌
24+
5000
只做原廠渠道 可追溯貨源
詢價
24+
700
詢價
INFINEON
23+
TO252
8820
全新原裝優(yōu)勢
詢價
INFINEON
2016+
TO-252
6600
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價
INFINEON
24+
TO-282
4897
絕對原裝!現(xiàn)貨熱賣!
詢價
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價
INFINEON
22+
P-TO252-3-1
19768
原裝現(xiàn)貨庫存.價格優(yōu)勢
詢價
INFINE0N
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
INFINEON
22+23+
TO252
74641
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
詢價
更多SPD04N60S5供應(yīng)商 更新時間2025-1-5 9:18:00