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SPB2

DATA SUBJECT TO CHANGE WITHOUT NOTLCE

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

SPB2

Ensemble de panneau pivotant

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

SPB2

Proximity Magnetic Sensors Rectangular Housing SPB2 Series

CARLOGAVAZZI

Carlo Gavazzi Holding AG

SPB2

包裝：散裝 類別：盒子，外殼，機架 盒組件 描述：PANEL SWING KIT

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

SPB2

包裝：散裝 類別：盒子，外殼，機架 盒組件 描述：PANEL SWING KIT

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

SPB2

包裝：盒 封裝/外殼：盒 類別：傳感器，變送器 磁性傳感器 - 位置，接近，速度（模塊） 描述：SEN MAG PROX RECT BISTABLE

Carlo Gavazzi Inc.

Carlo Gavazzi Inc.

Carlo Gavazzi Inc.

SPB200UFA

5,000 V - 20,000 V Single Phase Bridge 2.0 A Forward Current 70 ns Recovery Time

SinglePhaseBridge-HighVoltageSPBSeries 2.0A?70ns

VMI

Voltage Multipliers Inc.

SPB200UFB

5,000 V - 20,000 V Single Phase Bridge 2.0 A Forward Current 70 ns Recovery Time

SinglePhaseBridge-HighVoltageSPBSeries 2.0A?70ns

VMI

Voltage Multipliers Inc.

SPB20N60C2

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB20N60C3

Marking:20N60C3;Package:TO-263-3;Cool MOS Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB20N60C3

Isc N-Channel MOSFET Transistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPB20N60S5

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJE

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB20N60S5

Cool MOS Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?QualifiedaccordingtoJEDEC0)fortargetapplications ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB20N60S5

isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-263(D2PAK)packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchi

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPB20N60S5_05

Cool MOS Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?QualifiedaccordingtoJEDEC0)fortargetapplications ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB21N10

SIPMOS Power-Transistor

Feature ?N-Channel ?Enhancementmode ?175°Coperatingtemperature ?Avalancherated ?dv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB21N50C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB21N50C3

Marking:21N50C3;Package:PG-TO263;New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?QualifiedaccordingtoJEDEC)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB21N50C3

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=21A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPB21N50C3_05

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?QualifiedaccordingtoJEDEC)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    SPB2

  • 制造商：

    Hammond Manufacturing

  • 類別：

    盒子，外殼，機架 > 盒組件

  • 系列：

    SPB

  • 包裝：

    散裝

  • 類型：

    面板套件

  • 特性：

    鉸接式

  • 配套使用/相關(guān)產(chǎn)品：

    1418，C3R-HCLO，C3R-HCR 系列

  • 描述：

    PANEL SWING KIT

供應(yīng)商型號品牌批號封裝庫存備注價格
Hammond
2020+
N/A
155
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
CARLO GAVAZZI
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價
Hammond
22+
NA
155
加我QQ或微信咨詢更多詳細信息,
 詢價
Carlo Gavazzi
22+
Na
1208
航宇科工半導(dǎo)體-中國航天科工集團戰(zhàn)略合作伙伴!
 詢價
24+
N/A
64000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
INFINEON
23+
TO-263
7936
詢價
INFINEON
24+
PG-TO263-3D2PAK(TO
8866
詢價
RFMD/SIRE
17+
SOF-26
6200
100%原裝正品現(xiàn)貨
 詢價
INFINEON
2016+
TO-263
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
 詢價
Infineon
23+
TO-263
7750
全新原裝優(yōu)勢
 詢價
更多SPB2供應(yīng)商 更新時間2025-1-16 10:18:00

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