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SPA02N80C3

Isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA02N80C3

Power MOSFET

FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

SPA02N80C3

Cool MOS Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA02N80C3

CoolMOSTM Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA02N80C3

CoolMOSTM Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA02N80C3_08

CoolMOSTM Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA02N80C3_11

CoolMOSTM Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N80C3

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N80C3

CoolMOSPowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N80C3

N-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤2.7? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPD02N80C3

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP02N80C3

CoolMOSTMPowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP02N80C3

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP02N80C3

CoolMOSPowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號：

    SPA02N80C3

  • 功能描述：

    MOSFET COOL MOS PWR TRANS 800V 2A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
24+
TO-220F
20
只做原廠渠道 可追溯貨源
 詢價
Infineon(英飛凌)
23+
TO-220
8145
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
INFINEON
10+
TO-220
5870
詢價
24+
TO-220F
37800
詢價
Infineon
23+
TO-220AB
7750
全新原裝優(yōu)勢
 詢價
INFINEON
23+
TO-220F
7936
詢價
Infineon
17+
TO-220F
6200
詢價
Infineon
23+
TO-220F
5600
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
 詢價
INFINEON
0829+
TO-220F
50
原裝正品長期供貨，如假包賠包換 徐小姐13714450367
 詢價
INFINEON
1716+
TO-220F
8500
只做原裝進(jìn)口,假一罰十
 詢價
更多SPA02N80C3供應(yīng)商 更新時間2024-10-26 16:36:00

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