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SODJ110A

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORDIODE

Features Forsurfacemountedapplications Lowprofilepackage clampingcapability cycle):0.01 Hightemperaturesolderingguaranteed: 260℃/10seconds,atterminals 200Wpeakpulsepowercapabilitywitha10/1000μ Lowincrementalsurgeresistance,excellent s wavefrom,repetitionrate

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

SODJ110ASH

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

SODJ110A-SH

SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

PDF上傳者:深圳市福田區(qū)吉富昌電子商行

SODJ110A-SH

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

SODJ110CA

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORDIODE

Features Forsurfacemountedapplications Lowprofilepackage clampingcapability cycle):0.01 Hightemperaturesolderingguaranteed: 260℃/10seconds,atterminals 200Wpeakpulsepowercapabilitywitha10/1000μ Lowincrementalsurgeresistance,excellent s wavefrom,repetitionrate

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

SODJ110CASH

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

SODJ110CA-SH

SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

PDF上傳者:深圳市福田區(qū)吉富昌電子商行

SODZ110A-SH

GLASSPASSIVATEDJUNCTIONZenervoltageregulatordiodes1.0WattSteadyState

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

SQJ110EP

AutomotiveN-Channel100V(D-S)175?CMOSFET

FEATURES ?TrenchFET?GenIVpowerMOSFET ?AEC-Q101qualified ?100RgandUIStested ?Qgd/Qgsratio

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SQJ110EP

AutomotiveN-Channel100V(D-S)175°CMOSFET

FEATURES ?TrenchFET?GenIVpowerMOSFET ?AEC-Q101qualified ?100RgandUIStested ?Qgd/Qgsratio

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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