訂購數(shù)量 | 價格 |
---|---|
1+ |
SISA04DN-T1-GE3_VISHAY/威世科技_MOSFET 30V 2.15mOhm@10V 40A N-Ch G-IV華斯頓科技
- 詳細信息
- 規(guī)格書下載
產品屬性
- 類型
描述
- 型號:
SISA04DN-T1-GE3
- 功能描述:
MOSFET 30V 2.15mOhm@10V 40A N-Ch G-IV
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商
- 企業(yè):
深圳市華斯頓科技有限公司
- 商鋪:
- 聯(lián)系人:
朱先生-余先生-夏小姐-張小姐
- 手機:
13925279453
- 詢價:
- 電話:
0755-83777708/83777607/82799993
- 傳真:
0755-83355559
- 地址:
深圳市福田區(qū)華強北上步工業(yè)區(qū)201棟4樓A18室/分公司:深圳市福田區(qū)華強北深紡大廈C座西7樓/市場部:華強北新亞洲電子市場3B047展銷柜
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