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DPG20C200PB

SchottkyBarrierRectifier

FEATURES ·Multi-layerMetal-SiliconPotentialStructure ·LowLeakageCurrent ·HighCurrentCapability,HighEfficiency ·HighJunctionTemperatureCapability MECHANICALCHARACTERISTICS ·LowVoltageHighFrequencySwitchingPowerSupply ·LowVoltageHighFrequencyInversCircuit ·LowVoltag

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

DPG20C200PB

HighPerformanceFastRecoveryDiodeLowLossandSoftRecoveryCommonCathode

LowLossandSoftRecovery HighPerformanceFastRecoveryDiode CommonCathode Features/Advantages: ●Planarpassivatedchips ●Verylowleakagecurrent ●Veryshortrecoverytime ●Improvedthermalbehaviour ●VerylowIrm-values ●Verysoftrecoverybehaviour ●Avalanchevoltagerate

IXYS

IXYS Corporation

DPG20C200PB

HiPerFRED2HighPerformanceFastRecoveryDiodeLowLossandSoftRecovery

LowLossandSoftRecovery HighPerformanceFastRecoveryDiode CommonCathode Features/Advantages: ●Planarpassivatedchips ●Verylowleakagecurrent ●Veryshortrecoverytime ●Improvedthermalbehaviour ●VerylowIrm-values ●Verysoftrecoverybehaviour ●Avalanchevoltagerate

IXYS

IXYS Corporation

DPG20C200PN

HiPerFRED2HighPerformanceFastRecoveryDiodeLowLossandSoftRecovery

LowLossandSoftRecovery HighPerformanceFastRecoveryDiode CommonCathode Features/Advantages: ●Planarpassivatedchips ●Verylowleakagecurrent ●Veryshortrecoverytime ●Improvedthermalbehaviour ●VerylowIrm-values ●Verysoftrecoverybehaviour ●Avalanchevoltagerate

IXYS

IXYS Corporation

DSA20C200PB

SchottkyRectifierDiode

FEATURES ·Improvedthermalbehavior ·Highreliabilitycircuitoperation ·Extremelylowswitchinglosses ·VerylowVf ·Lownoiseswitching

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

DSA20C200PB

HighPerformanceSchottkyDiodeLowLossandSoftRecoveryCommonCathode

IXYS

IXYS Corporation

S20C200C

SchottkyBarrierRectifiers

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

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90000
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39960
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ARTESYN
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335
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ARTESYN
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MODULE
28600
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ARTESYN
23+
50000
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2265
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更多SIL20C200SADJVJ供應(yīng)商 更新時(shí)間2024-11-6 10:36:00

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