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SIHG47N60S-E3

600 V Power mosfets

600VPOWERMOSFETs VishayisaddingtoitsSuperJunctionpowerMOSFETfamilywithnewn-channeldevicesintheTO-247package,featuringultra-lowmaximumon-resistanceandlowgatechargeforanimprovedfigureofmerit(FOM). Features: ?HighEarcapability ?ImprovedRonxQgfigureofme

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHW47N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHW47N60E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHW47N60E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Swi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHW47N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHW47N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

FEATURES ?FastbodydiodeMOSFETusingEseries technology ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?IncreasedrobustnessduetolowQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordef

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHW47N60EF

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPW47N60CFD

N-ChannelMOSFETTransistor

DESCRITION ?HighPeakCurrentCapability FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤83m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPW47N60CFD

CoolMOSPowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Periodicavalancherated ?Qualifiedforindustrialgradeapplicationsaccording

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW47N60CFD

CoolMOSPowerTransistor

CoolMOS?PowerTransistor Features ?Newrevolutionaryhighvoltagetechnology ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Periodicavalancherated ?Qualifiedforindustrialg

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    SIHG47N60S

  • 功能描述：

    MOSFET N-CHANNEL 600V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
VISHAY/威世
21+
TO-247
20000
原裝現(xiàn)貨假一罰十
 詢價(jià)
Vishay(威世)
23+
標(biāo)準(zhǔn)封裝
10033
原廠直銷,大量現(xiàn)貨庫存,交期快。價(jià)格優(yōu),支持賬期
 詢價(jià)
VISHAY/威世
24+
TO-247
958
原廠授權(quán)代理 價(jià)格絕對(duì)優(yōu)勢(shì)
 詢價(jià)
VISHAY/威世
22+
TO-247
7500
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價(jià)
VISHAY
23+
TO-247
5260
原廠原裝正品
 詢價(jià)
VISHAY/威世
24+
TO-247
5715
只做原裝 有掛有貨 假一罰十
 詢價(jià)
VISHAY
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
VISHAY
TO-247AC
50
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
VISHAY
24+
原廠原封
4000
全新原裝環(huán)保現(xiàn)貨
 詢價(jià)
VISHAY
2020+
TO-247
142
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
更多SIHG47N60S供應(yīng)商 更新時(shí)間2025-2-26 15:14:00

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