訂購數(shù)量 | 價格 |
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1+ |
首頁>SIHG33N60E-GE3>芯片詳情
SIHG33N60E-GE3_SILAN/士蘭微_MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS中遠(yuǎn)芯科技
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
SIHG33N60E-GE3
- 功能描述:
MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商
- 企業(yè):
深圳市中遠(yuǎn)芯科技有限公司
- 商鋪:
- 聯(lián)系人:
龐小姐
- 手機(jī):
18923863610
- 詢價:
- 電話:
0755-82535237
- 地址:
深圳市福田區(qū)華強電子世界深圳二號店5樓H5C020
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